TC1101 rev6_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 1/5 low noise and medium power gaas fets features low noise figure: nf = 0.5 db typical at 12 ghz photo enlargement high associated gain: ga = 12 db typical at 12 ghz high dynamic range: 1 db compression power p -1 = 18.5 dbm at 12 ghz breakdown voltage: bv dgo 9 v lg = 0.25 m, wg = 160 m all-gold metallization for high reliability tight vp ranges control high rf input power handling capability 100 % dc tested description the TC1101 is a gaas pseudomorphic high electron mo bility transistor (phemt) chip, which has very low noise figure, high associated gain and high dynamic range. the device can be used in circuits up to 30 ghz and suitable for low noise and medium power amplifier a pplications including a wide range of commercial an d military applications. all devices are 100% dc test ed to assure consistent quality. all bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. electrical specifications (t a =25 c) symbol conditions min typ max unit nf noise figure at v ds = 2 v, i ds = 10 ma, f = 12ghz 0.5 0.7 db g a associated gain at v ds = 2 v, i ds = 10 ma, f = 12ghz 10 12 db p 1db output power at 1db gain compression point, f = 12ghz v ds = 6 v, i ds = 25 ma 17.5 18.5 dbm g l linear power gain, f = 12ghz v ds = 6 v, i ds = 25 ma 14 15 db i dss saturated drain-source current at v ds = 2 v, v gs = 0 v 48 ma g m transconductance at v ds = 2 v, v gs = 0 v 55 ms v p pinch-off voltage at v ds = 2 v, i d = 0.32 ma -1.0* volts bv dgo drain-gate breakdown voltage at i dgo =0.08 ma 9 12 volts r th thermal resistance 225 c/w note: * for the tight control of the pinch-off voltage . TC1101?s are divided into 3 groups: (1) TC1101p0710 : vp = -0.7v to -1.0v (2) TC1101p0811 : vp = -0.8v to -1.1v (3) TC1101p0912 : vp = -0.9v to -1.2v in addition, the customers may specify their requir ements. absolute maximum ratings (t a =25 c) typical noise parameters (t a =25 c) v ds = 2 v, i ds = 10 ma symbol parameter rating v ds drain-source voltage 7.0 v v gs gate-source voltage -3.0 v i ds drain current i dss i gs gate current 160 a p in rf input power, cw 18 dbm p t continuous dissipation 250 mw t ch channel temperature 175 c t stg storage temperature - 65 c to +175 c opt frequency (ghz) nf opt (db) g a (db) mag ang rn/50 2 0.38 19.8 0.99 4 0.48 4 0.40 17.5 0.90 9 0.40 6 0.42 15.6 0.82 18 0.37 8 0.45 13.9 0.76 29 0.34 10 0.50 13.1 0.69 43 0.32 12 0.55 12.4 0.63 55 0.30 14 0.64 11.7 0.56 65 0.28 16 0.78 11.1 0.45 76 0.26 18 0.95 10.6 0.34 90 0.24
TC1101 rev6_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 2/5 g d s s 290 12 250 12 chip dimensions units: micrometers gate pad: 55 x 50 chip thickness: 100 drain pad: 55 x 50 source pad: 55 x 60 typical scattering parameters (t a =25 c ) v ds = 2 v, i ds = 10 ma 0 1 . 0 1 . 0 - 1 . 0 1 0 . 0 1 0 . 0 - 1 0 . 0 5 . 0 5 . 0 - 5 . 0 2 . 0 2 . 0 - 2 . 0 3 . 0 3 . 0 - 3 . 0 4 . 0 4 . 0 - 4 . 0 0 . 2 0 . 2 - 0 . 2 0 . 4 0 . 4 - 0 . 4 0 . 6 0 . 6 - 0 . 6 0 . 8 0 . 8 - 0 . 8 swp max 18ghz swp min 2ghz s11 0 1 5 3 0 4 5 6 0 7 5 9 0 1 0 5 1 2 0 1 3 5 1 5 0 1 6 5 -180 - 1 6 5 - 1 5 0 - 1 3 5 - 1 2 0 - 1 0 5 -9 0 - 7 5 - 6 0 - 4 5 - 3 0 - 1 5 swp max 18 ghz swp min 2 ghz mag max 0.15 0.075 per div s12
TC1101 rev6_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 3/5 frequency s11 s21 s12 s22 (ghz) mag ang mag ang mag ang mag ang 2 0.9879 -20.21 4.3485 162.66 0.0296 77.08 0.7367 - 11.76 3 0.9740 -29.96 4.2452 154.28 0.0434 70.91 0.7235 - 17.37 4 0.9564 -39.31 4.1126 146.20 0.0560 65.04 0.7068 - 22.68 5 0.9364 -48.20 3.9594 138.48 0.0674 59.53 0.6877 - 27.66 6 0.9152 -56.56 3.7943 131.15 0.0774 54.40 0.6676 - 32.28 7 0.8939 -64.40 3.6242 124.22 0.0861 49.66 0.6472 - 36.54 8 0.8732 -71.72 3.4546 117.66 0.0937 45.29 0.6276 - 40.46 9 0.8536 -78.52 3.2894 111.45 0.1002 41.27 0.6090 - 44.06 10 0.8354 -84.84 3.1312 105.57 0.1058 37.57 0.5919 -47.37 11 0.8188 -90.72 2.9813 99.99 0.1106 34.16 0.5764 - 50.43 12 0.8037 -96.18 2.8406 94.68 0.1148 31.00 0.5627 - 53.28 13 0.7901 -101.25 2.7092 89.60 0.1183 28.08 0.5506 -55.93 14 0.7780 -105.98 2.5868 84.74 0.1214 25.36 0.5402 -58.41 15 0.7671 -110.39 2.4731 80.07 0.1241 22.82 0.5313 -60.76 16 0.7575 -114.51 2.3676 75.57 0.1264 20.44 0.5239 -62.99 17 0.7491 -118.37 2.2697 71.21 0.1284 18.20 0.5179 -65.12 18 0.7416 -121.99 2.1788 66.99 0.1302 16.08 0.5132 -67.16 * the data does not include gate, drain and source bond wires. typical scattering parameters (t a =25 c ) v ds = 6 v, i ds = 25 ma 0 1 5 3 0 4 5 6 0 7 5 9 0 1 0 5 1 2 0 1 3 5 1 5 0 1 6 5 -180 - 1 6 5 - 1 5 0 - 1 3 5 - 1 2 0 - 1 0 5 -9 0 - 7 5 - 6 0 - 4 5 - 3 0 - 1 5 swp max 18 ghz swp min 2 ghz mag max 5 1 per div s21 0 1 . 0 1 . 0 - 1 . 0 1 0 . 0 1 0 . 0 - 1 0 . 0 5 . 0 5 . 0 - 5 . 0 2 . 0 2 . 0 - 2 . 0 3 . 0 3 . 0 - 3 . 0 4 . 0 4 . 0 - 4 . 0 0 . 2 0 . 2 - 0 . 2 0 . 4 0 . 4 - 0 . 4 0 . 6 0 . 6 - 0 . 6 0 . 8 0 . 8 - 0 . 8 swp max 18ghz swp min 2ghz s22 0 1 . 0 1 . 0 - 1 . 0 1 0 . 0 1 0 . 0 - 1 0 . 0 5 . 0 5 . 0 - 5 . 0 2 . 0 2 . 0 - 2 . 0 3 . 0 3 . 0 - 3 . 0 4 . 0 4 . 0 - 4 . 0 0 . 2 0 . 2 - 0 . 2 0 . 4 0 . 4 - 0 . 4 0 . 6 0 . 6 - 0 . 6 0 . 8 0 . 8 - 0 . 8 swp max 18ghz swp min 2ghz s11 0 1 5 3 0 4 5 6 0 7 5 9 0 1 0 5 1 2 0 1 3 5 1 5 0 1 6 5 -180 - 1 6 5 - 1 5 0 - 1 3 5 - 1 2 0 - 1 0 5 -9 0 - 7 5 - 6 0 - 4 5 - 3 0 - 1 5 swp max 18 ghz swp min 2 ghz mag max 0.1 0.01 per div s12
TC1101 rev6_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 4/5 frequency s11 s21 s12 s22 (ghz) mag ang mag ang mag ang mag ang 2 0.9861 -22.03 5.2729 161.97 0.0218 76.68 0.7718 - 10.24 3 0.9704 -32.59 5.1264 153.31 0.0318 70.37 0.7586 - 15.08 4 0.9507 -42.66 4.9406 145.03 0.0408 64.44 0.7422 - 19.62 5 0.9288 -52.16 4.7291 137.18 0.0488 58.94 0.7239 - 23.82 6 0.9059 -61.05 4.5045 129.78 0.0558 53.89 0.7050 - 27.69 7 0.8834 -69.32 4.2765 122.83 0.0618 49.28 0.6865 - 31.23 8 0.8618 -76.97 4.0524 116.31 0.0669 45.10 0.6690 - 34.49 9 0.8418 -84.05 3.8370 110.19 0.0712 41.30 0.6530 - 37.49 10 0.8234 -90.59 3.6330 104.41 0.0749 37.85 0.6386 -40.28 11 0.8068 -96.63 3.4418 98.96 0.0781 34.72 0.6260 - 42.90 12 0.7919 -102.23 3.2639 93.79 0.0807 31.86 0.6150 -45.37 13 0.7786 -107.40 3.0990 88.86 0.0830 29.24 0.6057 -47.73 14 0.7668 -112.21 2.9466 84.16 0.0850 26.83 0.5978 -49.99 15 0.7564 -116.69 2.8058 79.65 0.0867 24.60 0.5913 -52.18 16 0.7471 -120.86 2.6758 75.31 0.0882 22.54 0.5861 -54.32 17 0.7389 -124.76 2.5557 71.12 0.0895 20.62 0.5821 -56.41 18 0.7316 -128.41 2.4446 67.06 0.0906 18.82 0.5790 -58.46 *the data does not include gate, drain and source b ond wires. small signal model, v ds = 2 v, i ds = 10 ma 0 1 5 3 0 4 5 6 0 7 5 9 0 1 0 5 1 2 0 1 3 5 1 5 0 1 6 5 -180 - 1 6 5 - 1 5 0 - 1 3 5 - 1 2 0 - 1 0 5 -9 0 - 7 5 - 6 0 - 4 5 - 3 0 - 1 5 swp max 18 ghz swp min 2 ghz mag max 6 2 per div s21 0 1 . 0 1 . 0 - 1 . 0 1 0 . 0 1 0 . 0 - 1 0 . 0 5 . 0 5 . 0 - 5 . 0 2 . 0 2 . 0 - 2 . 0 3 . 0 3 . 0 - 3 . 0 4 . 0 4 . 0 - 4 . 0 0 . 2 0 . 2 - 0 . 2 0 . 4 0 . 4 - 0 . 4 0 . 6 0 . 6 - 0 . 6 0 . 8 0 . 8 - 0 . 8 swp max 18ghz swp min 2ghz s22
TC1101 rev6_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 5/5 schemati cgs cgd cds rg rd rds ri rs gm t lg ld ls parameters lg 0.047 nh rs 1.290 ohm rg 1.460 ohm ls 0.001 nh cgs 0.207 pf cds 0.068 pf ri 3.680 ohm rds 321.5 ohm cgd 0.027 pf rd 1.525 ohm gm 54.80 ms ld 0.038 nh t 3.340 psec small signal model, v ds = 6 v, i ds = 25 ma schemati cgs cgd cds rg rd rds ri rs gm t lg ld ls parameters lg 0.047 nh rs 1.250 ohm rg 1.460 ohm ls 0.001 nh cgs 0.254 pf cds 0.067 pf ri 5.910 ohm rds 377.8 ohm cgd 0.019 pf rd 1.525 ohm gm 66.00 ms ld 0.038 nh t 3.640 psec chip handling die attachment: conductive epoxy or eutectic die attach is recommen ded. eutectic die attach can be accomplished with au-sn (80%au-20%sn) perform at st age temperature: 290 c 5 c; handling tool: tweezers; time: less than 1min. wire bonding: the recommended wire bond method is thermocompressi on bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. stage temperature: 2 20 c to 250 c; bond tip temperature: 150 c; bond force: 20 to 30 gms depending on size of wire and bond tip temperature. handling precautions: the user must operate in a clean, dry environment. care should be exercised during handling avoid damage to the devices. electr ostatic discharge (esd) precautions should be obser ved at all stages of storage, handling, assembly, and testing. the static discharge must be less than 300v.
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